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First-principles calculations were performed to calculate the electronic structures of low temperature phase (LTP) MnBi (Mn50Bi50) and substitutionally and interstitially Sn-doped MnBi [Mn50Bi25Sn25, (Mn0.5Bi0.5)66.7Sn33.3]. Brillouin function predicts the temperature dependence of saturation magnetization M(T). Sn substitution for Bi in MnBi (Mn50Bi25Sn25) changes the magnetocrystalline anisotropy constant (Ku) from −0.202 MJ/m3 (the in-plane magnetization) for LTP MnBi to 1.711 MJ/m3 (the out-of-plane magnetization). In comparison, the Ku remains negative but slightly decreases to −0.043 MJ/m3 when Sn is interstitially doped in MnBi [(Mn0.5Bi0.5)66.7Sn33.3]. The Curie temperature (TC) decreases from 716 K for LTP Mn50Bi50 to 445 K for Mn50Bi25Sn25 and 285 K for (Mn0.5Bi0.5)66.7Sn33.3. Mn50Bi25Sn25 has a lower magnetic moment of 5.034 μB/f.u. but a higher saturation magnetization of 64.2 emu/g than (Mn0.5Bi0.5)66.7Sn33.3 with a magnetic moment of 6.609 μB/f.u. and a saturation magnetization of 48.2 emu/g because the weight and volume of the substitutionally Sn-doped MnBi are smaller than the interstitially Sn-doped MnBi. The low Curie temperature and magnetization for Sn-doped MnBi are attributed to the high concentration of Sn. Thus, future study needs to focus on low Sn-concentrated MnBi.

 

Lead iodide (PbI2) has gained much interest due to its direct electronic gap in the visible range and layered crystal structure. It has thereby been considered as a promising material for applications in atomically thin optoelectronic devices. In this work, we present a detailed investigation of the effect of spin–orbit coupling (SOC) that arises from the presence of heavy atoms on the electronic and optical properties of PbI2 using first-principles calculations based on density-functional theory and many-body perturbation theory. We find that SOC not only alters the bandgap but also induces the mixing of orbital characters, resulting in a significant change in the overall band structure and charge carrier effective masses. Moreover, the band orbital mixing caused by SOC results in the dramatic change in optical transition matrix elements and, correspondingly, the absorption spectrum. Our experimentally measured absorption spectra validate the calculation results and demonstrate the importance of SOC in the optical processes of PbI2. Our findings provide insights that are important for the potential use of PbI2 as a material platform for visible optoelectronic devices.

 

Spoke-type PMSMs were designed with commercial permanent magnets and theoretically designed hexaferrite: Nd-Fe-B (NdFe35, G1NH), Alnico (8B, 8H, 9), and La-CoSrM hexaferrite (NMF-15G). It was found that coercivity (Hc) plays a crucial role in determining motor performance. The ANSYS Maxwell software was used to characterize the designed motor performance. Commercial RE-free Alnico 9 holds a 10.5 MGOe of (BH)max, much higher than a 5.5 MGOe of RE-free Alnico 8B/8H and SrM (SrFe12O19) hexaferrite magnets. However, the Alnico 9 motor performance is not better than the other Alnico 8B/8H and hexaferrite motors. The spoke-type PMSM with our theoretically designed SrM hexaferrite simulated motor performance. A motor performs best when the Hc/Br ratio equals one with a high Hc. For instance, the motor torque and peak power increase to 189 Nm and 178 kW, respectively, as the Hc increases to 4.86 kOe from 2.43 kOe. However, the motor performance is not significantly changed with a fixed Hc and various Br. It was found that regardless of (BH)max, coercivity (Hc) plays a dominant role in motor performance. 

Two-dimensional (2D) hexagonal boron nitride (h-BN) is one of the few materials showing great promise for light emission in the far ultraviolet (UV)-C wavelength, which is more effective and safer in containing the transmission of microbial diseases than traditional UV light. In this report, we observed that h-BN, despite having an indirect energy bandgap, exhibits a remarkably high room-temperature quantum efficiency (∼60%), which is orders of magnitude higher than that of other indirect bandgap material, and is enabled by strong excitonic effects and efficient exciton-phonon interactions. This study offers a new approach for the design and development of far UV-C optoelectronic devices as well as quantum photonic devices employing 2D semiconductor active regions.

 

Both two-dimensional (2D) transitional metal dichalcogenides (TMDs) and III–V semiconductors have been considered as potential platforms for quantum technology. While 2D TMDs exhibit a large exciton binding energy, and their quantum properties can be tailored via heterostructure stacking, TMD technology is currently limited by the incompatibility with existing industrial processes. Conversely, III-nitrides have been widely used in light-emitting devices and power electronics but not leveraging excitonic quantum aspects. Recent demonstrations of 2D III-nitrides have introduced exciton binding energies rivaling TMDs, promising the possibility to achieve room-temperature quantum technologies also with III-nitrides. Here, we discuss recent advancements in the synthesis and characterizations of 2D III-nitrides with a focus on 2D free-standing structures and embedded ultrathin quantum wells. We overview the main obstacles in the material synthesis, vital solutions, and the exquisite optical properties of 2D III-nitrides that enable excitonic and quantum-light emitters.